Device for converting thermal energy into electrical energy

ABSTRACT

A current source and method of producing the current source are provided. The current source includes a metal source, a buffer layer, a filter and a collector. An electrical connection is provided to the metal layer and semiconductor layer and a magnetic field applier may be also provided. The source metal has localized states at a bottom of the conduction band and probability amplification. The interaction of the various layers produces a spontaneous current. The movement of charge across the current source produces a voltage, which rises until a balancing reverse current appears. If a load is connected to the current source, current flows through the load and power is dissipated. The energy for this comes from the thermal energy in the current source, and the device gets cooler.

PRIORITY

This application is a divisional application of U.S. patent applicationSer. No. 11/336,354, filed Jan. 20, 2006 now U.S. Pat. No. 8,053,947,which claims the benefit of priority to Provisional Application60/750,575, filed Dec. 14, 2005, all of which are herein incorporated byreference in their entirety.

TECHNICAL FIELD

The present invention relates to a current source. More specifically,the present invention relates to a current source containing metals,semiconductors and insulators.

BACKGROUND

In solids, a number of energy bands exist. These energy bands include avalence band and a conduction band. The conduction band is at higherenergy than the valence band. Each energy band contains multiple statesin which a charged carrier (electron or hole) may be present. Insemiconductors and insulators, the conduction band is separated from thevalence band by a bandgap. There are essentially no states in thebandgap.

In semiconductors and insulators, at zero temperature and under noexcitation conditions, the states in the valence band are completelypopulated by electrons, while the states in the conduction band arecompletely populated by holes, i.e. empty of electrons. In metals, onthe other hand, the conduction band and the valence band are the same.Thus, metals are highly conductive as electrons are essentially free tomove around from a populated state to an unpopulated state. Ideally, ininsulators or undoped semiconductors, on the other hand, theconductivity is relatively low because the electrons completely populatethe valence band and thus no states are available to which the electronsare able to move. However, there is a finite conductivity in insulatorsor undoped semiconductors due to thermal excitation. Some of theelectrons in the valence band receive enough energy to transition acrossthe bandgap. Once the electrons are in the conduction band, they canconduct electricity, as can the hole left behind in the valence band. Asthe bandgap increases, the conductivity decreases exponentially. Thus,the bandgap is zero in a metal as the conduction band and valence bandoverlap, the bandgap is greater than about 4 eV in insulator (e.g. 8.0eV for SiO₂), and between zero and about 4 eV in a semiconductor.

Energy bands are shown in momentum space. That is, the energy bands of asolid are illustrated in terms of the relationship between the availablestates in energy and momentum. Other constructs are useful incharacterizing solids. For example, in solid-state physics a Fermisurface is often used to describe various aspects of a solid. A Fermisurface is an abstract boundary or interface useful for characterizingand predicting the thermal, electrical, magnetic, and optical propertiesof metals, semimetals, and semiconductors. The Fermi surface is relatedto the periodicity of a lattice that forms a crystalline solid (i.e. thedistance between elements forming the lattice) and to the occupation ofelectron energy bands in such materials. The Fermi surface defines asurface of constant energy in momentum space. The Fermi surface, atabsolute zero, separates the unfilled states from the filled states. Theelectrical properties of the material are determined by the shape of theFermi surface, because the current is due to changes in the occupancy ofstates near the Fermi surface.

Many electronic and other devices use metals, insulators, andsemiconductors. One example of such a device includes a current source.A current source is a device that supplies substantially a constantamount of current independent of the voltage across its terminals. Anideal current source produces the voltage used to maintain a specifiedcurrent. Many electronic devices use circuit arrangements that containcurrent sources.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is illustrated by way of example and not limitedto the accompanying figures in which like references indicate similarelements.

FIG. 1 illustrates one embodiment of a current source.

FIGS. 2 a, 2 b, 2 c show a band diagram illustrating electrontransitions in an embodiment of the source in FIG. 1.

FIGS. 3 a, 3 b are graphs of the rate of excitations vs. temperature andthe minimum detection temperature vs. Ni composition, respectively, inthe embodiment of the source in FIG. 1.

FIGS. 4 a, 4 b, and 4 c are graphs of L for W, Pd, and Ni vs.temperature, respectively, in the embodiment of the source in FIG. 1.

FIGS. 5 a and 5 b illustrate band diagrams of a source and differentbuffers in the embodiment of FIG. 1.

FIGS. 6 a, 6 b, 6 c show band diagrams of embodiments of differentcurrent sources.

FIGS. 7 a, 7 b, 7 c show band diagrams and associated equivalentcircuits and current-voltage graphs of embodiments of different currentsources.

FIG. 8 shows a band diagram of the filter-collector region of anembodiment of a current source.

FIG. 9 shows a band diagram of the source-buffer-filter region of anembodiment of a current source.

Skilled artisans appreciate that elements in the figures are illustratedfor simplicity and clarity and have not necessarily been drawn to scale.

DETAILED DESCRIPTION

A current source and method of producing the current source is provided.The current source includes at least a metal layer and a semiconductorlayer. An electrical connection is provided to the metal layer andsemiconductor layer and a magnetic field applier may be provided. Theinteraction of the layers produces a spontaneous current. The movementof charge across the current source produces a voltage, which risesuntil a balancing reverse current appears. If a load is connected to thecurrent source, current flows through the load and power is dissipated.The energy for this comes from the thermal energy in the current source,and the device gets cooler.

Referring to FIG. 1, in one embodiment, the current source 100 includesfour layers 102, 104, 106, and 108. The four layers include a source102, a buffer 104, a filter 106, and a collector 108. Each of the fourlayers contacts at least one other layer; i.e. the source 102 contactsthe buffer 104, the buffer 104 contacts the filter 106, and the filtercontacts the collector 108. Leads 110 from which current may beextracted are electrically connected to the source 102 and the collector108. A magnetic field B may be applied in a direction substantiallyperpendicular to the layers 102, 104, 106, 108 via a magnetic source120, such as a coil.

Although the layers 102, 104, 106, and 108 are shown as single layers,one or more of these layers 102, 104, 106, and 108 may be multiplelayers. The interaction of the source 102, buffer 104, filter 106, andcollector 108 produces a spontaneous current. The movement of chargeacross the current source 100 produces a voltage, which rises until abalancing reverse current appears. If a load 112 is connected to thecurrent source 100 through leads 110, current flows through the load 112and power is dissipated. The energy for this comes from the thermalenergy in the current source 100, and the current source 100 getscooler.

The source 102 is a metal or mixture of metals which has localizedstates at the bottom of the conduction band. The localized states 204 atthe bottom of the conduction band 202 are shown schematically in FIG. 2a. Interactions between electrons near the Fermi surface and thelocalized electrons trapped on the localized states 202 occasionallyelevate the localized electrons to the Fermi surface as shown in FIG. 2b as transition 1. The energy for this transition is between about 1 and6 eV and comes from the energy of collisions of the localized electronwith multiple free electrons. Normal collisions return an electron tothe localized state and produce excess electrons above the Fermi surfaceand excess holes below, as shown in FIG. 2 b as transition 2 and in FIG.2 c. These energetic electrons and holes may be the source of thecurrent. Interactions between localized electrons and phonons can alsoelevate the localized electrons to the Fermi surface. In this case theenergy for the transition comes from multiple phonons.

A suitable source metal has at least two properties. First, the sourcehas localized states at the bottom of its conduction band. These statesshould have an energy E, about 0.01 eV<E<about 0.05 eV below the bottomof the conduction band. The number of these states should be low enoughso that their overlap is small. This is to say that the number of statesshould be small enough so that the levels are not degenerate (i.e. theydo not spread into an impurity band that merges with the conductionband). In one embodiment, the concentrations are less than about 1000ppm (part per million). Second, the probability of transition 1 shown inFIG. 2 b occurring in the source should be large enough to produceenough energetic electrons. Localized states in the metal can beproduced in three ways: disorder in the metal, small amounts ofimpurities, or an applied magnetic field (shown in FIG. 1).

A disordered metal, or a metal with some degree of disorder, can bedefined as a metal whose potential for conduction electrons isnon-periodic. For a small amount of disorder, it may be possible todivide the potential into two parts, Vp (which has the periodicity ofthe lattice) and Vnp (which is non-periodic). The relative size of Vnpand Vp can be taken as a measure of the degree of disorder. There are anumber of ways for a metal to have disorder. It may be an alloy of twoor more metals whose atoms are randomly distributed throughout thelattice. It may have a number of impurities whose size is significantlydifferent from the size of the host metal atoms. The impurity atoms pushtheir nearest neighbors to slightly different positions, those atomspush their nearest neighbors, and so on. A pure metal may consist ofmore than one stable isotope. The different isotopes will be randomlydistributed throughout the lattice, producing a slightly disorderedpotential. The metal may be in a metastable mixture of two differentcrystal forms, in a structure called random stacking. Or the metal maybe a transition metal with localized magnetic moments pointing in randomdirections. The non-periodic potential will produce localized states atthe bottom of the conduction band through the process of Andersonlocalization. Disordered metals can be divided into two classes, puremetals and mixtures. Atoms of transition metals and rare earth metalshave partially filled d-shells. Transition metals are elements that arecharacterized by the filling of an inner d electron orbital (or shell)as atomic number increases. Transition metals includes include theelements with atomic numbers 21 to 30, 39 to 48, 58 to 80, and 89 to112, i.e. and in particular, from titanium to copper and those elementslying in the columns therebelow in the International Union of Pure andApplied Chemistry (IUPAC) periodic table.

The transition metals have randomly oriented magnetic moments due to theincomplete filling of the d shell. The random orientation of themagnetic moments of these shells may produce a disordered potential forthe conduction electrons in these metals. In particular, the potentialthat a conduction electron experiences while on an atom may depend onthe relative orientations of the magnetic moments of the atom and itsnearest neighbors. Most of the transition metals have crystal structuresin which every atom has 12 nearest neighbors. Most of the remainingtransition metals have structures with 8 nearest neighbors. It may bethat, for an atom to have a low enough potential to produce a localizedstate with E>about 0.01 eV below the bottom of the conduction band, 9 ofits nearest neighbors have magnetic moments aligned with its magneticmoment, and 3 are anti-aligned with its magnetic moment. With randomlyaligned moments, the fraction of atoms with localized states may be lowenough to satisfy the conditions listed above.

The normal situation is more complicated, because most d shells havemore than two possible orientations, (j>½, where j is the angularmomentum quantum number), but the same principle may apply. In theferromagnetic metals Fe, Co, and Ni, the relative orientations ofneighboring magnetic moments is not random for T<T_(c) (the Curietemperature). At T=0, all the magnetic moments are aligned and there isno possibility of an atom having a lower potential than the average. Astemperature is increased, disorder increases. At some temperature To itbecomes possible for some atoms to have localized states. As thetemperature is further increased, the number of localized statesincreases.

In mixtures of two or more metals, the random positions of the differentatoms may produce a disordered potential. Mixtures can be comprised ofmetals that normally dissolve in each other, such as Ni—Cu, Pd—Ag,Pt—Au, or of metals that do not normally mix but can be deposited in amixed state. Examples of metals that do not normally mix include Fe—Coand Ti—V.

Turning away from disordered metals to metals containing impurities,some impurities in certain metals may produce localized states. Fornon-transition metals (such as those in col. 2 and 13-17 in the newIUPAC notation), the impurity metal should be of the same column of theperiodic table as the parent metal, and usually lower in the column. Forinstance, Ga or In may be used as impurities in Al or K or Rb may beused as impurities in Na. However, there are also exceptions to theserules; for instance, Bi impurities in Pb produce localized states. Fortransition metals, the impurity metal can be of the same column as theparent metal or of a column to the right of the column of the parentmetal. Cu in Ni is one such example.

The concentration of the impurity atoms can range from less than 1 partper million up to an upper limit in which the isolated localized statesoverlap and merge to become the disordered localized states. For lowconcentrations (<1000 ppm—part per million), the number of energeticelectrons produced is proportional to the concentration of impurities.

Rather than provide impurities, an external magnetic field can beapplied to produce the current source. If a magnetic field is applied toa metal, states that are localized in two dimensions, called Landaustates, are produced at the bottom of the conduction band. To producethe Landau states, the metal is substantially free of disorder. Forexample, the purity of a non-transition metal should be greater thanabout 99.9% (e.g. less than 10 ppm). As shown in FIG. 1, the magneticfield B is applied substantially perpendicular to the surface of thesource 102.

Ordinarily, the excitation of an electron from a localized state at thebottom of the conduction band to the Fermi surface happens extremelyrarely. It is possible to increase the frequency of this event through aprocess which will subsequently be referred to as probabilityamplification. Probability amplification can occur in transition metalsas a result of the interaction of the incomplete d-shells of neighboringatoms and thermal vibrations (phonons) of the atomic lattice. Innon-transition metals, probability amplification can be produced closeto the physical surface of the metal (e.g. within about 100 Å) by theapplication of an alternating electric field and a non-parallel magneticfield B.

In a given metal, a probability amplification value can be assigned forelectrons in each band and for phonons. For instance, a transition metalwith an S band and a D band has probability amplification values PAS(S-band), PAD (D-band), and PAL (phonon). In many metals, the intrinsicprobability amplification of electrons is large compared to externallyproduced probability amplification, making the probability amplificationessentially independent of external factors such as applied magneticfield, applied electric field, temperature, and pressure. For metalswith one conduction band, the value of probability amplification forelectrons varies inversely with the ease with which the electrons movefrom atom to atom. S-electrons move most easily, so PAS is relativelysmall. P-electrons move less easily, so PAP (probability amplificationin the P-band) is larger. D-electrons move much less easily, so PAD ismuch larger. F-electrons in rare-earth metals move with so muchdifficulty that they do not form a band at all, so these rules do notapply to them.

The same trend applies from metal to metal. In the Cr, Mo, W group,d-electrons move easily, so PAD is relatively small. As one moves to theright in the periodic table, d-electrons become less mobile and PADincreases, until the Ni, Pd, Pt group, where PAD is greatest. There isthe same variation within columns. The d-shell in row 5 atoms tends tobe deeper than in row 4 or 6 atoms. So for instance, PAD in Pd is largerthan PAD in Ni or Pt. For metals with more than one conduction band,interactions between electrons in different shells in an atom caninfluence the probability amplification of a band. In transition metals,PAS is larger (but still much smaller than PAD) than PAS innon-transition metals because of the interaction between the s and dshells. PAS will be largest in those transition metals with the largestPAD.

The probability amplification of phonons PAL and electrons can beinfluenced by external factors. One way PAL can be achieved close to thephysical surface (e.g. within about 100 Å) is, as indicated above, bythe application of an alternating E-field and a B-field. The electricand magnetic fields are not parallel to each other.

One way to apply the electric field is to have the neighboring layer orlayers (i.e. the buffer layer 104 or the filter layer 106) be a materialwhich has a high density of optically active localized phonon modes. Thematerial thus has a large number of charged atoms that are vibrating,producing an alternating electric field (schematically illustrated inFIG. 1). This alternating electric field is able to penetrate a shortdistance into the source 102. Typical frequencies of vibration of thecharged atoms extend between about 1012 to 1013 Hz. For a vibrationfrequency of about 1013 Hz, for example, Cu has a skin depth of 200 Å.For other metals, the depth may be different.

The magnetic field can be applied externally. In different embodiments,the magnetic field can be applied by placing the current source 100 in asolenoid 120 (as shown in FIG. 1) or by placing permanent magnetsnearby. The output of the source 102 can then be controlled by changingthe strength of the applied magnetic field.

In addition, the probability amplification increases with temperature.At low temperatures, the number of excitations per unit time and unitvolume, dn/dt, is below the detectable limit, as shown in FIG. 3 a. At afinite turn on temperature, T_(o), dn/dt becomes detectable and risesrapidly with temperature. The value of T_(o) for a given metal isdetermined by the nature of the localized states and the effectivenessof probability amplification. The value of T_(o) for mixtures can bevaried continuously over a predetermined range by varying thecomposition of the particular mixture. In Cu—Ni alloys, for instance,disorder is greatest close to 50% Cu-50% Ni. Only the Ni atoms haveincomplete d-shells so the probability amplification increases withincreasing Ni content. A graph of T_(o) versus composition for thisseries of alloys is predicted to have the form shown in FIG. 3 b.

The thickness of the source 102 can vary from few atomic thicknesses(about 10 Å) to a maximum thickness desired for the overall currentsource 100. For thicknesses below about 100 Å, a buffer may be used onone or both sides of the source 102.

Since transition metals have disorder and probability amplification,they can all be considered candidates to be source metals. Many of thetransition metals have turn on temperatures To that are too high to bepractical. The turn on temperatures To can be determined using thethermal conductivity, electrical conductivity, and thermopower oftransition metals at a series of temperatures. More particularly, theturn on temperatures To can be determined using equation (1): An upperbound for the turn on temperature may be estimated for some metals usingthermal conductivity, electrical resistivity, and thermopower data at aseries of temperatures. The Lorenz number L is defined by equation (1):L=(k*r)/T+S2  (1)

In equation (1), k is the thermal conductivity, r is electricalresistivity, and S is thermopower of the metal. L should approach amagnitude of 2.443×10-8 watt-ohm/(° C.)₂ at high temperatures. Sevenmetals which have significant deviations from this are Mo, W, Ni, Pd,Pt, Fe and Co. Data for Pd, W, and Ni are shown in Tables 1, 2a and 2b,and 3 and illustrated in FIGS. 4 a, 4 b, and 4 c. ΔK in the tables isthe amount of thermal conductivity in addition to that due to theconduction electrons that must exist in the metal to achieve themeasured L. ΔK can be calculated from eq. (1) using measured k, r, andS. If this additional thermal conductivity comes from lattice thermalconductivity (the only conventional possibility), its value should beproportional to 1/T, for temperatures greater than the Debye temperatureof the metal. Any part of ΔK not attributable to lattice thermalconductivity, especially a ΔK increasing with temperature may be anindication of thermal conductivity from excitation of electrons fromlocalized states-meaning both localized states and probabilityamplification are present in the metal. However, while these sevenmetals may make good source metals, use of L vs. T data alone may notrule out metals to use. Excitation of localized states does not alwaysaffect thermal and electrical conductivity. Mixtures of metals can beinvestigated in the same way. Cu—Ni, Ag—Pd, and Au—Pt alloys may be goodsource metals. The rate of excitation of localized states in a metal canbe increased by increasing the amount of disorder, or by increasing theprobability amplification. To have a measurable effect on thermalconductivity, and thus on L, the localized states should be large (˜1000A or more) with a high rate of excitation. Spread out localized statesimply low disorder, so to achieve a high rate of excitation a relativelylarge probability amplification is needed. So the deviations in L seenfor the seven metals indicates they have a high degree of probabilityamplification. Nearest neighbors on the periodic table to these sevencould be expected to have higher than average probability amplificationvalues. For mixtures of metals, the amount of disorder can be greatlyincreased, so the level of probability amplification does not need to beas large. Therefore all transition metals are good candidates for sourcemetals in alloys.

TABLE 1 Palladium (Pd) Thermal Thermo- conductivity Electrical power ΔKT (watts/ resistivity (micro- L + S² (watts/ (K) cm*deg) (ohm-cm)*10⁶volts/deg) (×10⁸) cm*deg C.) 100 .737 2.595 2.0 1.91 0.066 200 .7076.858 −4.85 2.43 0.081 300 .721 10.765 −10.69 2.60 0.090 400 .741 14.422−13.6 2.69 0.098 600 .797 21.056 −19.3 2.83 0.105 800 .870 26.856 −25.712.99 0.142 1000 .949 31.878 −32.26 3.13 0.183 1200 1.02 36.168 −38.463.22 0.209

TABLE 2a Tungsten (W) Thermal Electrical conductivity resistivity L ΔK T(K) (watts/cm*deg) (ohm-cm)*10⁶ (×10⁸) (watts/cm*deg C.) 300 1.76 5.483.21 0.576 400 1.59 7.91 3.14 0.452 600 1.37 13.14 3.00 0.308 800 1.2618.78 2.96 0.238 1000 1.19 24.72 2.94 0.211 1200 1.14 30.9 2.94 0.1911600 1.06 44.03 2.92 0.186 2000 1.01 57.62 2.91 0.162 2400 .97 72.042.91 0.156

TABLE 2b Tungsten ΔK(T1)/ΔK(T2) T1 T2 ΔK(T1)/ΔK(T2) theoretical 400 6001.47 1.50 600 800 1.29 1.33 800 1000 1.13 1.25 1000 1200 1.10 1.20 12001400 1.02 1.17

TABLE 3 Nickel (Ni) Thermal Thermo- conductivity Electrical power ΔK T(watts/ resistivity (micro- L + S² (watts/ (K) cm *deg ) (ohm-cm)*10⁶volts/deg) (×10⁸) cm*deg C.) 100 1.64 .986 −8.50 1.62 0.21 150 1.222.237 −10.98 1.83 0.11 200 1.07 3.703 −13.45 2.00 0.07 250 .975 5.384−16.35 2.13 0.06 300 .907 7.237 −19.52 2.23 0.05 400 .802 11.814 −23.992.43 0.07 500 .722 17.704 −25.75 2.62 0.10 600 .656 25.554 −22.16 2.840.13 1000 .718 41.496 −29.85 3.07 0.15 1200 .762 46.728 −35.42 3.090.167

The tables illustrate three cases. ΔK for Pd increases with Tmonotonically from 100K to 1200K. It is hard to estimate a To but 200Kis a reliable upper bound. ΔK decreases with T at low temperatures forNi, reaches a minimum at 300K, and increases with T for T>300K. An upperbound of 300K is a safe upper bound. This is consistent with ourunderstanding of disorder in Ni. Nickel is ferromagnetic below 620K. At0K all the localized magnetic moments are aligned and there is nodisorder due to them. As the temperature is increased, more and moremagnetic moments become misaligned until they are all pointing in randomdirections at 620K. At a temperature between 0K and 620K, there will bethe right amount of disorder, large enough to have excitations and smallenough to have large localized states. Table 2b shows the ratio of thechange in temperature (ΔK) for a series of pairs of temperatures, aswell as the theoretical ratio of the ΔK derived exclusively due tolattice thermal conductivity. For W, significant deviations beginbetween T=600K and T=800K. This can be taken as the approximate value ofTo for W, 600<To<800K. This To could be lowered with the techniques ofprobability amplification discussed earlier. For Pd, ΔK increases with Tfor all T>100K. An estimate of To for Pd is To<200K. For Ni, ΔKdecreases with T for T<300K and increases with T for T>300K. To can betaken as approximately 250<To<350K for Ni. Since Ni is ferromagneticbelow T=620K, this value of To is determined by the growing number oflocalized states, as discussed above. Fe and Co show the same behavior,with To (Fe) about 370K and To (Co) about 500K. Small amounts ofimpurities in these three ferromagnetic metals can reduce their Curietemperatures, which would also reduce To. ΔK for W never increases withtemperature but the ratios of ΔK for two different temperatures (asshown in Table 2b) differ from what would be expected for pure latticeconductivity and are consistent with an additional contribution tothermal conductivity from excitation of localized states that isconstant with temperature. It is difficult to estimate a To, butexcitations appear to be present at T=800K. Note that the theseestimates of To for these metals are for the interiors of the metals.Values and values of To near the surface may be different, usuallyhigher, due to possibly lower because of different levels of probabilityamplification for atoms near the surface.

The seven metals which may be the best candidates for source metalsamong the transition metals are Mo, W, Ni, Pd, Pt, Fe, and Co. Each ofthe L vs. T data for these metals indicates the presence of excitations.The transition metals that are in the same column as one of thesemetals, but whose L vs. T data show no evidence of excitations, may alsobe promising. These metals include Cr, Ru, Rh, Os, and Ir. The rest ofthe transition metals may be poorer candidates than the metals alreadymentioned.

Source metals with isolated impurity atoms have already been discussed.If the host metal is a transition metal, probability amplification canbe intrinsic to the metal. If the host metal is a non-transition metalwithout impurities generating disorder, probability amplification may beprovided from outside the metal. If the localized states are produced bya magnetic field, the metal is essentially free of disorder without theapplication of the magnetic field. In this case, any pure non-transitionmetal may be used, for example Al or Sn. The magnetic field producingthe Landau states can be used in probability amplification.

Turning to the buffer 104, the buffer 104 permits the excitationprocesses in the source 102 to occur close enough to the surface of thesource 102 so that an appreciable fraction of the excess electrons andexcess holes far from the Fermi energy reach the surface of the source102. For this to happen, the bottom of the conduction band in the source102, where the localized states are disposed, lines up with a forbiddenband of the buffer 104. A suitable buffer 104 may be a metal, insulatoror semiconductor. The buffer 104 should be thin enough (about 10-50 Å)so that a substantial fraction of the energetic charges (electrons orholes) pass through to the filter 106. For example, if the buffer 104 isan insulator, the charges from the source 102 may tunnel through thebuffer 104 to the filter 106.

Two cases are illustrated in FIGS. 5 a and 5 b. FIG. 5 a illustrates theband diagram of a material that is not suitable as a buffer for aparticular source. As shown in FIG. 5 a, the localized states and bottomof the conduction band in the source 102 are aligned with the conductionband of the buffer 104, and the tops of the conduction band of thesource 102 and buffer 104 are offset by energy ΔE₁. The presence of thematerial forming the buffer 104 destroys the conditions in the source102 in which excitations occur close to the interface. In this case, thenumber of energetic electrons increases with the distance from theinterface as shown in the accompanying graph. As shown in FIG. 5 b, thelocalized states and bottom of the conduction band in the source 102 areoffset by energy ΔE₂, and the tops of the conduction band of the source102 and buffer 104 are aligned. If the bands of the filter 106 line upcorrectly with the source 102, the buffer 104 can be eliminated and thefilter 106 may then serve as the buffer. In this case, the number ofenergetic electrons is constant with the distance from the interface asshown.

Turning to the filter 106, the filter 106 functions to conduct the highenergy charges originating from the source 102 and to block the flow ofelectrons close to the Fermi surface. In one embodiment, the filter 106comprises a semiconductor, e.g. an elemental semiconductor such as Si orGe or a compound semiconductor such as a III-V semiconductor.Alternatively, the filter 106 may comprise an insulator such as SiO₂,CaO, or AlN. In various embodiments, the filter 106 may conduct highenergy electrons and/or holes while blocking other charge carriers. Forexample, in one embodiment, the filter 106 conducts the high energyelectrons and blocks all other charges. In another embodiment, thefilter 106 conducts high energy holes and blocks all other charges. Inanother embodiment, both high energy electrons and high energy holes aretransported through the filter 106. In this last case, the polarity ofthe output current of the current source 100 is determined by whichcharge carrier dominates. These embodiments are described below withregard to FIG. 6 in more detail.

The collector 108 may be a metal or a heavily doped semiconductor (e.g.about 10¹⁷ cm⁻³ or more dopants) and can be any thickness above about 10Å. If outside electrical connection is made to the collector 108, itshould be at least about 1 micron thick. The collector 108 may chosen tomake an ohmic contact with the semiconductor filter 106 in some cases,and in other cases to make a rectifying contact. As shown in FIG. 8,surface state pinning of the Fermi level largely determines the size ofthe barrier between metal and semiconductor. An ohmic contact betweenthe filter 106 and collector 108 can be made in that case by heavilydoping the collector side of the filter 106. A rectifying contact can bemade at the buffer-filter interface by lightly doping the semiconductoron the buffer layer side as shown in FIG. 9. The choice of collectormetal in this case can be based on compatibility with neighboringlayers. Sn, for example, may be a good choice.

If the filter 106 is a II-VI semiconductor or other semiconductor thatdoes not have surface state pinning, the nature of the contact betweenthe semiconductor and metal may be determined by the relative positionsof the Fermi level of the metal and the conduction and valence bandedges of the semiconductor. For instance, Pd and Pt form a rectifyingcontact with ZnO. Sn and Al form an ohmic contact with ZnO.

Excitation processes in the source metal cause there to be moreelectrons and holes far from the Fermi energy than what is predicted byequilibrium statistical mechanics. The buffer 104 allows those energeticcharges to reach the surface of the source 102 and to pass into andthrough the buffer 104, into the filter 106. The filter 106 allows someof the high energy charges to pass through into the collector 108.Because the collector 108 is an ordinary metal, it does not have asurplus of high energy charges that are able to pass through the filter106. Consequently, charge builds up in the collector 108 and an electricfield develops in the filter 106. The field grows until a balancingcurrent flowing in the opposite direction develops. If the field growstoo large, breakdown will occur in the semiconductor, destroying itsability to filter.

In addition, the filter 106 and collector 108 permit sufficient reversecurrent to flow so that breakdown does not occur. This can be done in anumber of ways. If the semiconductor is thin enough (about 50 Å),tunneling can occur from the collector 108 to the buffer 104 or source102. If the semiconductor has enough defects, such as amorphous siliconor germanium, conduction through defect states in the middle of theforbidden band can occur. If the collector metal forms an ohmic contactwith the filter layer semiconductor, a Schottky diode is formed. Ascharge builds up in the collector, the Schottky diode becomes forwardbiased in the collector-source direction and a balancing reverse currentcan develop.

If the semiconductor in the filter 106 is undoped, thus having anintrinsically high resistance, the thickness of the filter 106 islimited to about 100 to 200 Å to prevent space-charge effects, whichwill produce instabilities in output current. If the semiconductor isdoped or low resistance, the thickness can be above about 100 Å.

Possible semiconductors include Si, Ge, GaAs, AlAs, AlSb, SnO₂, amongmany others. Insulators that can be used include MgO and CaO. If thesemiconductor also provides probability amplification as previouslydiscussed, it has a large number of localized phonon modes. Mixturesemiconductors include, such as Al_(x)Ga_(1-x)As or AlAs_(x)Sb_(1-x) orZnO_(x)S_(1-x), where x can vary from about 0.25 to 0.75. These mixturesare good semiconductors but have a disordered phonon spectrum with manylocalized modes. Those modes provide an alternating electric field,which when combined with an externally applied magnetic field providesprobability amplification in the source. More complicated semiconductorssuch as organic semiconductors also can be used.

As described, the current source 100 includes a series of thin layers102, 104, 106, and 108 of metals and semiconductors and/or insulators.The layers 102, 104, 106, and 108 may be fabricated by vacuum depositionsuch that they contact each other. Different vacuum depositiontechnologies may be suitable for fabrication of the current source 100.These vacuum deposition technologies include sputtering, chemical vapordeposition, and electron beam evaporation.

Deposition takes place in a vacuum chamber. The chamber includes avessel capable of maintaining a vacuum. The chamber also has electricalfeedthroughs that allow current to be fed to wires inside the chamberand a motion feedthrough, which allows a target inside the vessel to bemoved, connected via vacuum tubing and valves to vacuum pumps. Thevacuum chamber maintains a vacuum of less than about 10⁻⁶ torr duringdeposition. Material to be evaporated is placed in conical baskets madeof tungsten filament, for example. If the material to be evaporated isin the form of wire or foil, it can simply be wrapped around a tungstenfilament. One end of the tungsten filament is connected to an electricalfeedthrough, while the other end of the tungsten filament is connectedto a wall of the vessel, which serves as electrical ground. If voltageis applied to the electrical feedthrough from the outside, current flowsthrough the filament, heating it and the material in contact with it.With enough current, the material gets hot enough to evaporate. Since itis in a vacuum, the atoms are emitted substantially uniformly in alldirections. The target is placed on a carrier connected to the motionfeedthrough so that it can be moved into optimal position to receive theevaporated material. Since the material, to a good approximation, isemitted substantially uniformly in all directions, the amount that hitsthe target, and thus the thickness of the layer, can be calculated fromsimple geometry and knowledge of the amount of material in the basketand the distance from the basket to the target. When the deposition ofone layer is completed, the target is moved to a new position, currentis run through another basket holding material for the next layer andthe process is repeated. In this way, layers fabricated without a largeamount of impurities occurring at the interface. Care is taken in theselection of material for adjoining layers as the deposited material maynot uniformly coat the target but instead form islands on the top of thetarget, especially for exceedingly thin layers.

An example device contains a steel substrate on which a sequence oflayers is formed. These layers may include 1000 Å of Sn, 100 Å of Ge, 30Å of Pb, and 1000 Å of Pd. The 30 Å layer of Pb forms the buffer. Thesequence can be repeated as many times as desired. After the desirednumber of repetitions of this sequence a final layer of 1 micron of Snis deposited. If vacuum is broken to reload material, it may be doneafter the Pd deposition. This will introduce a thin layer (of about 20Å) of PdO between the Pd and the next Sn layer. The 1000 Å layer of Snforms the collector layer, the Ge forms the filter, the 30 Å layer of Pbforms the buffer, and the Pd forms the source.

The steel substrate may be a conventional steel washer having a diameterof about 1 cm. The steel substrate is cleaned, rinsed with distilledwater, and dried using nitrogen gas, for example. The steel substratemay also be buffed to shine with a reasonable brightness using a softcotton cloth. A single layer, such as Sn, may be deposited. If thislayer is capable of being removed by an adhesive, such as a piece ofScotch tape, the substrate is cleaned again.

After a suitable cleaning, the disk is placed on carrier and depositionmaterial is placed in baskets or on wires. To deposit the above layers,Sn is placed in a basket, Ge in a basket, Pb in a basket, and Pd wireswrapped around a tungsten filament. The system is evacuated andcontinuously pumped until a vacuum of 10⁻⁶ torr is achieved. This takesabout 2 hours in one example of a vacuum system.

When the above vacuum is achieved, deposition may begin. First, 1000 Åof Sn is deposited, then 100 Å of Ge is deposited, followed by 30 Å ofPb. The Ge at this stage is in an amorphous form. The substrate isheated to 400K for 30 minutes to change the amorphous Ge to apolycrystalline Ge layer. After forming the polycrystalline Ge layer,1000 Å of Pd is deposited in which the Pd is doped with Ag. To repeatthis sequence, the chamber is opened up and reloaded with Sn, Ge, Pb,and Pd. The chamber is evacuated and the sequence is repeated. Tofinish, a 1 micron layer of Sn is deposited. Metal conductors are thenattached to the top and bottom of the disk with conductive epoxy orsoldered to make electrical connections.

FIGS. 6 a, 6 b, 6 c show band diagrams of embodiments of differentcurrent sources. In each of these embodiments, the top of the conductionband in the source 102 is aligned with the top of the conduction band ofthe collector 108. In the embodiment shown in FIG. 6 a, electrons thathave been excited in the source 102 tunnel through the buffer 104 andtransit across the filter 106 into the empty part of the conduction bandof the collector 108. As shown, the top of the valence band of thefilter 106 is below (i.e. has a lower energy than) the bottom of theconduction band of the source 102. In other words, the bottom of thebandgap of the filter 106, which is either a semiconductor or insulator,is below the bottom of the conduction band of the source 102. Thus, asthere are no states in the bandgap of the filter 106, holes generated inthe source 102 by the excitation of the electrons remain in the source102.

In the embodiment shown in FIG. 6 b, however, the valence band of thefilter 106 extends to above the bottom of the conduction band of thesource 102 while the bottom of the conduction band is at a higher energythan that of the excited electrons. Thus, holes in the source 102 tunnelthrough the buffer 104 and transit across the filter 106 into theoccupied part of the conduction band of the collector 108 while theexcited electrons generated in the source 102 remain in the source 102as there are no states in the bandgap of the filter 106.

In the embodiment shown in FIG. 6 c, both electrons, that have beenexcited in the source 102 and the holes left in the localized states,tunnel through the buffer 104 and transit across the filter 106. Theelectrons transit into the empty part of the conduction band of thecollector 108 and the holes transit into the occupied part of theconduction band of the collector 108. As can be seen, the bandgap of thefilter 106 is small enough such that the top of the valence band of thefilter 106 is above the bottom of the conduction band of the source 102and the bottom of the conduction band of the filter 106 is below theenergy level of the excited electrons in the source 102.

FIGS. 7 a, 7 b, and 7 c show band diagrams and associated equivalentcircuits and current-voltage graphs of different current sources. Asshown in FIG. 7 a, the electrons transit from the source 102 to theempty portion of the conduction band of the collector 108, forming theforward current I₀. In addition, electrons in the occupied portion ofthe conduction band of the collector 108 tunnel from the collector 108to the collector of the source 102 through the bandgap of the filter106, thereby forming the reverse current I_(T). The magnitude of thereverse current I_(T) is proportional to the voltage across the currentsource 100, the difference between the energy at the top of the occupiedpart of the conduction band in the collector 108 and the bottom of theconduction band in the filter 106, and exponentially decreases withincreasing thickness of the filter 106. As the equivalent circuitdiagram of the current source 100 looks like an ideal current sourcewith a resistor R in parallel (the resistance of the current source100), as shown, the voltage across the current source 100 is linear withthe resistance R. Thus, while the forward current I₀ is constant, thereverse current I_(T) increases linearly with the voltage V₀ across thecurrent source 100.

As shown in FIG. 7 b, another mechanism that can give rise to a reversecurrent is a current generated by defect hopping in the bandgap of thefilter 106. This is to say that, if defects exist in the filter 106 dueto imperfections in the lattice of the filter 106, for example, andthese defects create defect states in the bandgap, a defect current,I_(D) may be generated. Similar to FIG. 7 a, the equivalent circuitdiagram of the current source 100 in FIG. 7 b looks like an idealcurrent source with a resistor R in parallel (the resistance of thecurrent source 100). Thus, while the forward current I₀ is constant, thereverse current I_(D) increases linearly with the voltage V₀ across thecurrent source 100.

As shown in FIG. 7 c, another mechanism that can give rise to a reversecurrent is a current generated by an internal electric field establishedin the filter 106 by the presence of the source 102 and the collector108. This is to say that, when the current source 100 is fabricated, theconduction and valence band edges of the filter 106 may be pinned at theinterfaces between the collector 108 and the buffer 108 (if present).This, in turn, can cause the conduction and valence band in the filter106 to bend when the conduction bands of the source 102 and thecollector 108 align and thus establish an internal electric field. Inthis case, the equivalent circuit diagram of the current source 100 inFIG. 7 c looks like an ideal current source with a diode D in parallel(the resistance of the current source 100). As the current in a diodeincreases exponentially with voltage, again while the forward current I₀is constant, the reverse current I_(DIODE) increases linearly with thevoltage V₀ across the current source 100.

Note that the specification and figures are to be regarded in anillustrative rather than a restrictive sense, and all such modificationsare intended to be included within the scope of present invention. Asused herein, the terms “comprises,” “comprising,” or any other variationthereof, are intended to cover a non-exclusive inclusion, such that aprocess, method, article, or apparatus that comprises a list of elementsdoes not include only those elements but may include other elements notexpressly listed or inherent to such process, method, article, orapparatus.

It is therefore intended that the foregoing detailed description beregarded as illustrative rather than limiting, and that it be understoodthat it is the following claims, including all equivalents, that areintended to define the spirit and scope of this invention. Nor isanything in the foregoing description intended to disavow scope of theinvention as claimed or any equivalents thereof.

I claim:
 1. A device comprising: a current source comprising a plurality of layers including a source metal and an adjacent layer, the source metal comprising a metal having a conduction band, localized states at a bottom of the conduction band, a Fermi surface and probability amplification, wherein the adjacent layer includes a forbidden energy band and the localized states of the metal align with the forbidden energy band of the adjacent layer, such that a substantial number of electrons in the localized states of the metal are energized to the Fermi surface of the metal, and energized electrons are produced above the Fermi surface; a collector comprising a metal or a doped semiconductor different from the source metal; and a load connected to the source metal and to the collector, wherein the energized electrons produce a spontaneous current by internal thermal energy in the current source in the absence of thermal energy applied to the source or to the collector, such that the current flows through the load and power is dissipated.
 2. The device of claim 1, wherein the source metal comprises a disordered metal.
 3. The device of claim 2, wherein the source metal comprises a plurality of different metals in which the atoms of the different metals are randomly disposed.
 4. The device of claim 1, wherein the source metal comprises a pure transition metal.
 5. The device of claim 1, wherein the source metal comprises impurities, and wherein if the source metal is a non-transition metal, the impurities are in the same column of the periodic table as the non-transition metal, and if the source metal is a transition metal, the impurities are in the same column as the transition metal or in a column to the right of the column of the transition metal.
 6. The device of claim 1, further comprising a magnetic field source and an electric field source, wherein the source metal comprises a metal that is substantially free of disorder, the magnetic field source to apply a magnetic field substantially perpendicular to the first layer and the electric field source to apply an alternating electric field to the first layer, the electric field non-parallel with magnetic field.
 7. The device of claim 6, wherein the adjacent layer comprises a high density of optically active localized phonon modes and the electric field source comprises the adjacent layer. 